Abstract
For high capacitance aluminum electrode was selectively etched with square of tunnel pits. SU-8 photoresist as etching mask was patterned on aluminum by UV-assisted thermal imprint lithography and then surface area of aluminum was increased by electrochemical etching, where tunnel pits were generated regularly and were approximately 20 μm in length, 3.5 μm in width, resulting in 10 6 tunnels per cm 2 of surface. Consequently, the capacitance of the dielectric showed an increase of up to four times higher than the unpatterned surface.
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