Abstract
There is considerable interest in the use of ion implantation for material synthesis. The synthesis of AlGaAs by dual implants of As+ and Al+ into GaAs followed by rapid thermal annealing (RTA) has been reported recently. In this paper results relating to the formation of AlxGa1-xAs by depositing thin Al films on GaAs substrates and irradiating with arsenic ions followed by RTA are presented.Aluminium layers of 580Å or 650Å in thickness were deposited onto liquid encapsulated Czochralski (LEC) grown samples of semi-insulating <100> GaAs. The deposition was done using pure aluminium on a heated filament at a chamber pressure of ∽10−6 Torr with the thickness being measured using a talystep. Subsquently As+ implants were performed at room temperature using an energy of 150, 200 or 300 keV and a dose of 3x1016 or 1x1017 cm−2. The implantation energy was selected to ensure that the projected depth exceeded the thickness of the Al overlayer employed.
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Schedule a callMore From: Proceedings, annual meeting, Electron Microscopy Society of America
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