Abstract
In a semiconductor with high concentration of resonant donor states in the conduction band or of resonant acceptor states in the valence band, the Fermi level is pinned to the resonant state and only some of the resonant donors (or acceptors) are ionized. Due to the (screened) Coulomb interaction of the ionized centers, there occurs an ordering in space of these centers (made possible by the presence of neutral centers), even in the form of “crystallization”. It has a dramatic effect on scattering of free carriers. We compare these predictions with the recent data on Hg 1− x Fe x Se.
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