Abstract
A stacking fault-free region was found to be formed beneath a Si–SiO2 interface when a silicon crystal was oxidized to generate stacking faults and subsequently annealed in nitrogen atmosphere. This region extends further with prolonged annealing, irrespective of the size and density of the stacking faults already introduced in the crystal. Experimentally it is found that the growth of a stacking fault-free region during annealing follows the equation, d=const. tnexp (-Q/kT) where n and Q are 0.63±0.06 and 4.5±0.6 eV, respectively. The stacking fault nuclei were confirmed to be dissolved after annealing of oxidized crystals.
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