Abstract
A four-point probe method was used to study, as the layers were removed consecutively, the concentration distribution profiles of free electrons in high-resistivity p-Si with implanted P+ and Na+ ions. Anodic oxidation was used to remove layers at a depth of less than 1 μm, and polishing at larger depths. It was shown that the efficiency of diffusion doping of silicon with sodium is determined, to a large extent, by the ratio between the energies of P+ and Na+ ions. If the conditions are optimal, the efficiency of doping by simultaneous implantation of sodium and phosphorus ions is better (by a factor of 2.5 on the average) than that of doping with Na+ ions only.
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