Formation of a denuded zone in nitrogen-doped Czochralski silicon wafer treated by ramping anneals

Abstract

The formation of a denuded zone (DZ) and the bulk-microdefects (BMDs) region within conventional and nitrogen-doped Czochralski (NCZ) silicon subjected to ramping anneals has been investigated. It was found that the terminal temperature of the ramping anneal should be high enough to create a DZ while the starting temperature should be low enough to generate desirable high density of BMDs. Comparatively speaking, with the same heat treatment, the NCZ silicon possesses higher density of BMDs and a narrower DZ than CZ silicon. Moreover, for NCZ silicon, the ramping anneal can initiate at relatively higher temperature to generate an appropriately high density of BMDs. Of importance is that the ramping anneal with a final isothermal anneal at an elevated temperature such as 1150 °C can effectively create a substantial DZ, where there were no defects generated in the subsequent heat treatment significantly enabling oxygen precipitation.