Abstract
We have investigated the formation of embedded nanocrystals (NCs) in SiNx using Ga+ focused-ion beam irradiation of SiNx membranes, followed by rapid thermal annealing (RTA). During irradiation, redeposition is enhanced by developing side walls, leading to enhanced near-surface [Ga] and [Si]. Subsequent RTA leads to the formation of Si and Ga NCs embedded in SiNx. When the ratio of the irradiated area to the sidewall area is increased, redeposition is limited, and SiNx and GaN NCs are also apparent. We discuss the effect of limited redeposition on NC formation and the catalytic effect of Ga on Si NC nucleation and growth.
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