Abstract
A mechanism for porous silicon layer formation during n-type silicon anodization in hydrofluoric acid is proposed. The mechanism is based on the idea that silicon dissolution takes place at active impurity sites which are responsible for local electric field enhancement resulting in the breakdown of the depletion charge layer and initiation of pores. It is shown that the depletion charge layer exerts an essential influence on the process of pore channel formation. The equation for calculation of the average pore sizes and of the average distance between the pore walls in dependence on the conditions of the porous silicon layer formation is obtained. The mechanism presented explains earlier observed experimental data.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
