Abstract
The mechanism of formation of porous silicon layer (PSL) has been studied according to the following experimental results. PSL is formed by the local dissolution of silicon which occurs only at the base of the pores. The concentration of the electrolyte in the pores of PSL is constant during anodization and the anodic reaction in the pores proceeds uniformly in the thickness direction. The dissolution of silicon in the pores is the results of the divalent and the tetravalent reactions of silicon with , without the disproportionation reaction. The insoluble surface porous film (SPF) exists at the surface of PSL and the silicic acid is formed in PSL. A model of forming PSL is proposed, with emphasis being placed on the anodic reaction and the local dissolution of silicon which is initiated by SPF and is promoted by the hindrance layers composed of the silicic acid.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
