Abstract
In this study, the formation mechanism of an atomically flat Si(100) surface by annealing in Ar/4%H2 ambient utilizing the quartz furnace and its effect on Hf-based Metal/Oxide/Nitride/Oxide/Si diodes were investigated. After the etching of the unintentional oxide layer formed by annealing at 1050–1100°C in Ar/4%H2 ambient, the atomically flat p-Si(100) surface was obtained. Furthermore, it was found that the surface root mean square roughness was decreased with increasing the annealing duration. Finally, it was revealed that the J–V characteristics both of before and after 103 program/erase cycles of Al/HfN0.5/HfO2/HfN1.0/HfO2/p-Si(100) diodes were decreased one order of magnitude by a surface flattening process.
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