Abstract
The availability of high-quality silicon carbide (SiC) single crystals with large diameter is a key issue in the development of the full potential of SiC-based device technology. The formation and suppression of misoriented grains (MGs) in the marginal area of as-grown 6H-SiC single crystals are mainly discussed in this paper. The polytype of the MGs is identified to be mainly 6H-SiC by Raman spectroscopy and XRD. Results of modulation growth, in which different stages are decorated with nitrogen, reveal that the growth rate of MG is higher than that of the matrix. Owing to the MG orientation deviating from [0001], no micropipe has been observed in the etched MG samples. At the same time, there exist many thermal decomposition cavities (TDCs) at the initial growth stage, which indicates that the MG may result from a TDC. Based on this possible formation process, a method viasputtering carbon film on C-terminated (0001) 6H-SiC surface for eliminating TDCs is proposed, which may be helpful to suppress formation of MGs, hence to effectively grow SiC crystals with high quality and large diameter by moderate controls of critical growth conditions in the PVT technique.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
