Abstract
The influence of germanium (Ge) implantation on β-Ga2O3 followed by ex situ annealing through polymorph conversion in air at various temperatures (600–1100 °C) is studied. Atomic resolution aberration-corrected scanning transmission electron microscopy is employed to examine the structural and microstructural changes induced by the annealing process. The results show that the thermal annealing process leads to the formation of Ge nanocrystals, which subsequently disappear, leaving nano-voids inside the Ge-doped Ga2O3 matrix. In addition, the microstructure displays distinct crystallographic relationships in annealed β-Ga2O3 forming layers with well-defined interfaces. This work reveals the unique effects of Ge-implantation, demonstrating the possible functionalization of Ga2O3 with Ge nanocrystals.
Published Version
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