Formation and stability of {113} defects in oxygen implanted silicon-on-insulator material

Abstract

High dose oxygen implantation into Si (SIMOX – Separation by Implantation of Oxygen) is a viable technique for producing silicon-on-insulator structures. The {113} defect was first observed in SIMOX by van Ommen. It has received considerable study in bulk Si. Bergholz et al. proposed that {113} defects are coesite, a high pressure monoclinic phase of silica, and are a possible precursor to amorphous silicon oxide. Recently Bourrel proposed a self-interstitial model for the formation of hexagonal silicon in the {113} planes in the diamond cubic lattice which was an extension of Tan's model and suggested that oxygen is generally not required for the creation of {113} defects. In this paper we have examined the formation and stability of {113} defects in as-implanted and annealed SIMOX.The first set of samples studied was implanted to 2.4×1018 cm-2 at 200 keV from 400°C to 600°C. The second set was implanted at 150 keV to 2.0×1018 cm-2 at 500°C. Five equivalent parts of the wafer were annealed from 650°C to 1050°C in steps of l00°C for two hours in Ar. Cross-section samples were made by gluing, grinding, dimpling and ion milling of the wafer chips.