Abstract
Ultrathin chromium oxide layers (nanostructures) are synthesized by molecular laying (atomic layer deposition) on the (100)-oriented Si surface and the (100)- and (110)-oriented GaAs surfaces. The influence of technological conditions on the composition and basic regular trends in the formation of the layers is established. Some of the dielectric properties of the chromium oxide nanostructures and the quality of the semiconductor-insulator interface are assessed.
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