Abstract
This paper presents a study on the formation and shape control of InAsSb/InP nanostructures on InP (001) substrates. For the formation of InAsSb nanostructures, incorporation of Sb atoms into InAs islands results in significant morphology change in the islands due to the surfactant effect of Sb atoms and the large strain in the system. And, shape control of InAsSb/InP nanostructures is achieved by optimizing their growth parameters. Low growth temperature and high growth rate will induce the formation of InAsSb elongated quantum dots, while high growth temperature and low growth rate will promote the formation of InAsSb quantum wires or dashes.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
