Formation and optical characteristics of GaN:Eu/GaN core–shell nanowires grown by organometallic vapor phase epitaxy

Abstract

We report on the formation and optical characteristics of Eu-doped GaN (GaN:Eu)/GaN core–shell nanowires (NWs) grown by organometallic vapor phase epitaxy. A moderate V/III ratio and growth temperature enable the incorporation of Eu3+ ions into the GaN shells on GaN core NWs, resulting in red luminescence at room temperature whose peak intensity is more than 20 times larger than for a GaN:Eu film on planar GaN. The cathodoluminescence characterization corroborates that the observed enhanced Eu luminescence originates from the predominant formation of highly efficient Eu centers in the sidewalls of the GaN:Eu/GaN core–shell NWs.