Abstract
We present the results of multilayer ohmic contacts on -type 6H–SiC and their interface analysis. The as-deposited contacts show rectifying behavior and, with the increase in annealing temperature, they gradually transform to high-quality ohmic contacts exhibiting linear current-voltage characteristics. The interface evolution was analyzed through glancing angle X-ray diffraction, Auger electron spectroscopy, and atomic force microscopy. The and formed at the interfaces during the low-temperature annealing initiate the conversion from Schottky to ohmic behavior, while the increased formation at high-temperature annealing makes the perfect ohmic contacts. The results were interpreted through the thermodynamic reaction mechanisms.
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