Abstract
We have examined the formation and evolution of ripples on focused-ion-beam (FIB) irradiated compound semiconductor surfaces. Using initially normal-incidence Ga+ FIB irradiation of InSb, we tuned the local beam incidence angle (θeff) by varying the pitch and/or dwell time. For single-pass FIB irradiation, increasing θeff induces morphological evolution from pits and islands to ripples to featureless surfaces. Multiple-pass FIB irradiation of the rippled surfaces at a fixed θeff leads to island formation on the ripple crests, followed by nanorod (NR) growth. This ripple-NR transition provides an alternative approach for achieving dense arrays of NRs.
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