Abstract
Growth striations due to inhomogeneous incorporation of dope impurities as well as residual carbon in dislocation-free floating-zone and Czochralski silicon crystals have been studied. The dope striations are detected by means of spreading resistance measurements and preferential etching, while the carbon striations are analysed using among other things a special type of X-ray transmission section topography. The relationship between various growth parameters and striation formation is determined. The influence of remelt phenomena and solid-state diffusion on striation formation is analysed and directives are obtained for the elimination of striations during crystal growth. Carbon striations are also eliminated by means of annealing treatments of the as-grown crystals.
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