Abstract
The effect of wafer annealing on lattice parameter of liquid-encapsulated Czochralski (LEC) grown undoped semi-insulating GaAs crystals is investigated, showing that wafer annealing increases the lattice parameter from an anomalous state below that predicted by Vegard’s law. The sheet-carrier concentration of a silicon-implanted layer formed on undoped semi-insulating GaAs increases with the increase in lattice parameter caused by the wafer annealing. The reduction of BGaVAs complex defects is a reasonable explanation for the increase in lattice parameter and sheet-carrier concentration. In LEC-grown silicon-doped GaAs crystals, no anomalous reduction of lattice parameter is observed in as-grown crystals. It is speculated that the silicon introduced into the crystal from the melt fills the VAs vacancies in the GaAs crystal before BGaVAs forms. BGaVAs complex defects in undoped GaAs crystal must be formed during the post-growth cooling process.
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