Abstract
Field-Effect Transistor Technology is a very dynamic field in microwaves today. Improvements in both low-noise and high-power FET's are being made continuously in many countries around the world. It is the purpose of this Special Issue to introduce this topic with a comprehensive review paper and to highlight advances in the development of microwave FET's and their applications. Authors from Japan, Europe, and North America report recent achievements of ongoing work in this issue. Their contributions reflect the following trends in the direction of developments.
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