Abstract
It is recalled that electrical properties of GaAs thin layers grown by MOVPE can be comparable to those prepared by the chloride VPE process as far as power and low noise FET's are concerned. It is shown how a large capacity MOVPE reactor working at low pressure could be a serious competitor of the ion implantation techniques if we consider reliability between runs and homogeneity on the wafers. State of the art performance for both low noise and power FET's are reported. Though static characteristics pf power FET's are always consistent with the layers properties, anomalous behaviour of dynamic characteristics related to power FET's are occasionally observed. Tentative correlations between substrates, growth parameters and FET's microwave performances are given. Backgating effect is also discussed in terms of substrates and growth conditions.
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