Forecast of the Luminescent Phenomena of Silicon Rich Oxide Films off Stoichiometry by Means of the Global Reaction Model

Néstor David Espinosa-Torres,Javier Martínez-Juárez,Gregorio Flores-Carrasco,José Álvaro David Hernández De La Luz,José Francisco Javier Flores-Gracia,José Alberto Luna-López

doi:10.4236/jmp.2015.611170

Abstract

The Global Reaction Model describes a set of chemical reactions that can potentially occur during the process of obtaining silicon rich oxide (SRO) films, regardless of the technique used to grow such films which are an outside stoichiometry material. Particularly, chemical reactions that occur during the process of growing of SRO films by LPCVD technique are highlighted in this model. We suggest and evaluate either some types of molecules or resulting nanostructures and we predict theoretically, by applying the density functional theory, the contribution that they may have to the phenomenon of luminescence which is measured in SRO films. Also, we have calculated the opto-electronic properties of SRO films. The suggested model provides enough information required to identify the molecular structures resulting from the presence of defects in SRO films and also those corresponding to charged structures. It is also possible to detect the molecular structures which are modified due to the effect of heat treatment, and identify the presence of different oxidation states inclusive the formation of siloxanes.

Highlights

How to cite this paper: Espinosa-Torres, N.D., et al (2015) Forecast of the Luminescent Phenomena of Silicon Rich Oxide Films off Stoichiometry by Means of the Global Reaction Model
The aim of this review is twofold; on one hand, we have found relevant information in relationship to actual quantification of silicon nano-clusters (Si-nCs) about their size, electromagnetic range of emission, molecular structure and important parameters which are responsible for making variations of optical properties of Silicon Rich Oxides (SRO)
We take experimental information as background in order to focus correctly on our theoretical research based on using the Density Functional Theory (DFT) method corresponding to atomic composition of different silicon isomers suggested simulating the Si-nCs embedded in SRO films, SRO structures with specific defects and charged SRO structures, as possible responsible of luminescence in SRO films

Summary

Introduction

How to cite this paper: Espinosa-Torres, N.D., et al (2015) Forecast of the Luminescent Phenomena of Silicon Rich Oxide Films off Stoichiometry by Means of the Global Reaction Model. The motivation of this work is to apply a new model, which we have called the Global Reaction Model (GRM), for the theoretical study of the optical and electronics properties of Silicon Rich Oxides (SRO) structures regardless of the technique used to fabricate such structures. For developing this model, Espinosa et al [1] have reviewed firstly some important experimental results about measurements of structural and optical properties carried out on SRO samples grown by different techniques and the theoretical models available in order to describe a SRO network. In the section of Conclusion we stress the key contributions of this paper

Objectives

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Conclusion