Abstract
Microtip field-emitter array (FEA) has been formed using femtosecond pulsed laser deposited GaN thin film onto polymer microtip array. X-ray diffraction, scanning electronic microscope, and field emission measurements were carried out to analyze the profile, crystalline structures, and field emission properties of the emission array. The results indicate that the GaN thin film deposited on a like-conical-type polymer microtip array is hexagonal polycrystalline, and the GaN microtip FEA has uniform size, sharp tip, and well-defined profile, which shows a field emission characteristics.
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