Abstract
An undoped organic small-molecule 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) and a kind of nanocomposite blending poly(methyl methacrylate) (PMMA) into PBD are employed to implement bistable resistive switching. For the bistable resistive switching indium tin oxide (ITO)/PBD/Al, its ON/OFF current ratio can touch 6. What is more, the ON/OFF current ratio, approaching to 104, is available due to the storage layer PBD:PMMA with the chemical composition 1:1 in the bistable resistive switching ITO/PBD:PMMA/Al. The capacity, data retention of more than 1 year and endurance performance (>104 cycles) of ITO/PBD:PMMA(1:1)/Al, exhibits better stability and reliability of the samples, which underpins the technique and application of organic nonvolatile memory.
Highlights
Organic memory, a multidisciplinary and flourishing frontier of nanotechnology, has succeeded in significant breakthroughs [1–4]
The cross sections of the undoped PBD nanofilm and doped PBD:poly(methyl methacrylate) (PMMA)(1:1) nanocomposite film below 50 nm were characterized by xHITACHI S3400-N scanning electron microscope (SEM), exhibited in Fig. 1c, d
The statistical analysis of indium tin oxide (ITO)/PBD:PMMA(1:1)/Al indicated in Fig. 7d illustrates that the mean of IHRS and ILRS is 0.37 (0.17) μA and 1.83 (0.02) mA, respectively
Summary
A multidisciplinary and flourishing frontier of nanotechnology, has succeeded in significant breakthroughs [1–4]. The following work highlights the tunable effect of the organic material PBD and its nanocomposite blended by PMMA on electrical properties, and retention and endurance of the resistive switching were detected.
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