Abstract
Demands tor high resolution lithography are continuously increasing both for VLSI device fabrication and explorative research for various quantum device fabrications. At present, various nanofabrication techniques are investigated. The focused ion beam lithography technique provides high resolution and high flexibility and is attractive as nanofahrication technique. A few 10 nm sized patterns, for example, can be fabricated using focused ion beam. In the present paper, characteristics of focused ion beam lithography are discussed and compared with electron beam lithography.
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