Abstract
Maskless ion implantation by scanning a focused ion beam was applied to impurity doping for GaAs growth. The implanter was combined with the MBE growth chamber in an ultrahigh vacuum (UHV). Multilayered crystals with three-dimensional, arbitrary pattern-doped regions of submicron size are grown using computer software. The through process in UHV, which eliminates air exposure during the crystal growth process, prevents carbon contamination and deterioration of crystal quality at the growth-interrupted interface for ion implantation.
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