Fluorine implantation impact in extension region on the electrical performance of sub-50nm P-MOSFETs

H Fukutome,H Nakao,T Aoyama,Y Momiyama,H Arimoto

doi:10.1109/iedm.2003.1269327

Fluorine implantation impact in extension region on the electrical performance of sub-50nm P-MOSFETs

H Fukutome, H Nakao + Show 3 more

https://doi.org/10.1109/iedm.2003.1269327

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Publication Date: Dec 8, 2003

Citations: 8

Affiliation: Fujitsu (Japan)

#Extension Region #Fluorine Implantation + Show 8 more

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Abstract

We conclude that fluorine implantation in the extension region (F-tub) makes the Vth roll-off characteristic dramatically improve without degrading the drive current. Using scanning tunneling microscopy (STM) for two-dimensional (2D) carrier profiling, we directly confirmed that such an improvement of the device performance was induced by the reduction of the overlap length and the steep lateral abruptness on the nanometer scale.

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