Abstract
Fluorinated graphene field effect transistors (FETs) with an ionic liquid (IL) top-gate are demonstrated. Fluorinated graphene functionalized with different fluorine concentrations were prepared. Highly fluorinated graphene FETs controlled by ionic liquid gating (ILG) exhibited higher on/off ratios than pristine (non-fluorinated) graphene FET, while conventional back gating (BG) configuration resulted in lower on/off ratios. ILG can induce high charge density in fluorinated graphene with localized states because of extremely high electric field effect of an electric double layer between IL and fluorinated graphene. Thus, a higher on/off ratio was obtained by the combination of graphene fluorination and ILG.
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