Floating-gate type organic memory device with organic insulator film of plasma polymerized styrene

Abstract

Plasma polymerized styrene (ppS) thin films were prepared and used as gate insulator and tunneling layer in a floating-gate type organic memory device. To investigate feasibility of the ppS thin film for application in non-volatile organic memory, an organic thin film transistor (OTFT) and a floating-gate type organic memory device were fabricated. Current–voltage (I–V) characteristics of the OTFT and floating-gate type organic memory device were comparatively investigated, and hysteresis in the I–V characteristics of both devices was studied. A pseudo-charge-storage phenomenon was found for the ppS insulator thin film in the OTFT and floating-gate type organic memory device. The floating-gate type organic memory device revealed a reasonable hysteresis voltage of 27 V. It was confirmed that the ppS could be applied to fabricate an alternative floating-gate type organic memory device with promising memory function.