Abstract

Rare earth Nd3+ ion-doped Ca12Al14O33 single crystals were grown at a rate of 1 mm/h by the floating zone technique in an oxygen atmosphere. The Nd concentration in the central area of the as-grown crystals was higher than that in the peripheral area due to the highly concave growth interface shape. The average Nd concentration in the as-prepared parallelepiped slices of ∼6 × 3 × 2 mm3 for electride fabrication was ∼0.093 ± 0.011 atom % Nd in contrast to the nominal 0.1 atom % Nd concentration. The Nd-doped C12A7:Nd single crystalline electride prepared by thermal treatment with a Ti metal at 1100 °C for 48 h induced an insulator–metal transition with the highest conductivity of approximately 1165 S/cm. These annealing conditions provide an approach to completely remove clathrated oxide ions from the crystallographic cages, leading to the formation of C12A7:Nd(e–) and C12A7:e– electrides with high-density electrons (∼2.4 ± 0.2 × 1021 and ∼1.8 ± 0.1 × 1021 cm–3) localized in the cages. The carrier mobility at room temperature in C12A7:Nd(e–) was very similar to that in C12A7:e–, even though it was very high at temperatures below ∼150 K.

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