Abstract
Single crystals of the low temperature phase β II - Li 3 VO 4 were grown by the traveling solvent float zone (TSFZ) technique using a halogen lamp image furnace under an atmosphere of argon. Improvements in the crystal growth technique allowed the growth of large colorless crystals (4 mm diameter, 25 mm length) with no visible bubbles and no cracks. The significant improvements were the installation of a heat reservoir to the image furnace and the use of a polycrystalline rod obtained previously by the TSFZ technique as a feed rod. The heat reservoir and the polycrystalline feed rod provided the improvement of alteration of the crystal growth interface and the control of the movement of the molten zone during crystal growth, respectively, resulting in a significant reduction in crystal defects. No subgrain boundaries have been observed in crystal growth here.
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