Abstract
A floating zone technique for growing crystals of medium high melting point materials with an arc image furnace is presented. This technique has been successfully applied to silicon. The oxygen concentration, resistivities, and dislocation densities of resulting crystals were determined to make possible a comparison with crystals obtained by standard methods. In general this comparison is favorable. Considerations of floating zones, maximum power, and flux distribution indicate that floating zone techniques combined with an arc image furnace are promising in connection with the growth of good quality crystals of a variety of high melting point materials.
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