Abstract
An improved method for self-assembly fabrication of single-walled carbon nanotube (SWCNT) field effect transistors (FETs) is presented, combining the unique design of biased/floating potential electrode geometry and the technique of aligning CNTs by pre-defined trenches in “Sandwich”-like resist layers. Super-aligned SWCNT FETs bridging biased/floating potential electrode pairs with precisely controlled location can be demonstrated. Moreover, SWCNT FETs fabricated by this method exhibit excellent electrical properties, such as Ion/Ioff ratio up to 105 and sub-threshold slope ∼130mV/dec. This novel technique provides a more effective and flexible way to solve the CNT assembly issue. It could also enable the fabrication of future CNT based complementary logic circuit and nano-electrical–mechanical-system (NEMS).
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