Abstract
Random telegraph signals (RTSs) are observed in the single-walled carbon nanotube (SWNT) field-effect transistors. The RTS mechanism is studied in detail. It is shown that trapping/detrapping due to the defects in the oxide is the main reason for RTSs in the carbon nanotube field-effect transistors (CNT-FETs). The amplitude of the RTSs in CNT-FETs is mainly attributed to mobility modulation. The defect causing the RTSs is a hole-type Coulomb repulsive center located near the valance band of the SWNT.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
