Abstract
Floating body and hot carrier effects are thoroughly investigated in deep submicron N- and P- channel ultra-thin film SOI MOSFETs for a wide temperature range. A strong reduction of the parasitic bipolar transistor is obtained with decreasing the temperature (at 77K) and with a grounded substrate. However, the action of the PBT is not completely suppressed even at 77K with a body terminal. Substantial deviations from the traditional bell-shaped curves are found for the substrate current in N- and P- channel SOI devices and are attributed to the PBT carrier transport. The influence of these special SOI mechanisms on gate current is also underlined. Finally, original variations of hot carrier effects as a function of the temperature are shown and explained by the aforementioned SOI electrical properties and the differences between inversion and accumulation-mode devices.
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