Abstract
We designed two kinds of flip-chip bonded electro-absorption modulated laser on AlN or Si carrier, working at 100 Gb s−1. A theoretical comodeling approach based on 3D electromagnetic and circuit simulations has been applied and validated by measurements. As demonstrated, integration and behavior of future complex opto-electronic modules could be optimized applying such EM-based approach. © 2010 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2010.
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