Flicker noise in MOSFETs with gate-voltage-dependent mobility

Abstract

Flicker noise measurements in MOSFETs at low drain bias are explained in terms of the dependence of the carrier mobility on the gate voltage of the form μ 00[1 + β( V G − V T − V 0)] −1. Excellent agreement, both for the ( I d , V g ) characteristic and for the flicker noise, is obtained. The noise current spectrum is expressed in the normalized functions f( y 0, y 1) and f( y 0, y 1)/ y 0 in terms of the bias parameters y 0 = β( V g − V T ) and y 1 = β( V g − V T − V d ).