Abstract
We report measurements of the noise temperature of small-signal, low-noise X-band GaAs MESFET amplifiers from room temperature down to 2 K, at offset frequencies of several hundred hertz from the carrier and for input carrier powers from -40 to -20dBm. We observe a dramatic increase in the level of flicker noise as these devices are cooled to liquid helium temperatures, in marked contrast to the normally observed decrease in noise temperature of an unsaturated GaAs MESFET amplifier as it is cooled.
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