Abstract
Silicon nitride ceramics were modified by Ti-ion implantation in a MEVVA (MEtal Vapor Vacuum Arc) implanter. The influence of implantation parameters was studied by varying the ion dose over a wide range. The samples were implanted with 80 keV Ti ions with doses from 1 × 10 17 to 3 × 10 18 Ti/cm 2 at temperatures between 400 and 750 °C. The implantation dose strongly influences the flexural strength and microhardness of silicon nitride, increasing the flexural strength up to 14% relative to unimplanted silicon nitride.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
