Abstract
Silicon nitride ceramics were modified by Ti-ion implantation in a MEVVA (MEtal Vapor Vacuum Arc) implanter. The influence of implantation parameters was studied by varying the ion dose over a wide range. The samples were implanted with 80 keV Ti ions with doses from 1 × 10 17 to 3 × 10 18 Ti/cm 2 at temperatures between 400 and 750 °C. The implantation dose strongly influences the flexural strength and microhardness of silicon nitride, increasing the flexural strength up to 14% relative to unimplanted silicon nitride.
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