Abstract
► ReRAM devices are fabricated with solution-processable GeO 2 :S on flexible substrates. ► The Al/GeO 2 :S/Au ReRAM devices exhibit unipolar resistive switching behavior. ► The on/off ratio is about 10 7 . ► The memory characteristics are retained after 10 4 s. ► The memory characteristics are retained even after bending test for 10 3 cycles. In this study, resistive random access memory (ReRAM) devices are fabricated using solution-processable sulfur-doped GeO 2 (GeO 2 :S) on flexible substrates. The Al/GeO 2 :S/Au ReRAM devices exhibit the unipolar resistive switching behavior with an on/off ratio of more than 10 7 and the memory characteristics are retained after 10 4 s. The memory characteristics are unaffected by strains, even after the continuous substrate bending test for 10 3 cycles.
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