Flexible multi‐state nonvolatile antiferroelectric memory

Abstract

AbstractA rapid surge on the research of nonvolatile memory is occurring with the explosion of information data. However, the realization of multi‐state memory with enhanced storage capability remains a challenge, especially toward the bio‐integrated/wearable electronics. In this work, we propose an unprecedented flexible multi‐state data storage strategy based on antiferroelectric film (i.e., PbZrO3) with the assistance of unique mica substrates. These flexible PbZrO3 films exhibit remarkable durability and flexibility, that is, as high as 106 times bending with radii as small as 5 mm is achieved, the best activity reported so far for flexible antiferroelectric films. Most importantly, the memory endures 108 electrical write/read cycles and works properly reaching 390 K. These findings can provide new pathways for the development of the next‐generation multi‐state memory in smart wearable devices or flexible display screens.