Abstract
Beeswax, a natural nontoxic biological material, is used as the gate dielectric of flexible low-voltage indium–zinc-oxide (IZO)-based homojunction thin-film transistors (TFTs) on paper substrates. A high specific capacitance of 5 $\mu \text{F}$ /cm2 is measured at 1 Hz in the beeswax film due to the electric-double-layer effect. The current ON/OFF ratio, subthreshold swing, and field-effect mobility of the IZO-based TFTs on paper substrate are estimated to be $7.6\times 10 ^{6}$ , 86 mV/decade, and 14.6 cm2 /Vs, respectively. In addition, our results demonstrate that the flexible oxide-based TFTs on paper substrate show a good stability after 3000 times bending and 30 days aging testing. Such flexible low-voltage oxide-based homojunction TFTs have potential applications in portable paper electronics.
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