Flexible GaN microwire-based piezotronic sensory memory device

Abstract

Skin-inspired electronic devices that can store and retain impressions of sensory information after the removal of external stimuli are showing great significance for artificial sensory systems. Here, a single GaN microwire-based piezotronic sensory memory device (SMD) is presented to sense and memorize the impressions of tactile information. The SMD is capable to be programmed into a high resistance state by inputting external strain, and reversibly erased back to the low resistance state with an electrical voltage. Due to the piezotronic effect, the piezo-potential induced by compressive strain would cause the dissolution/redistribution of conductive channels of nitrogen vacancies in the bamboo-shaped GaN microwire. Furthermore, the SMD array demonstrates a distinct spatial mapping of external strain sensing and retaining with the operations of strain program and electrical erase. The single micro/nanowire-based sensory memory device will have great applications in the field of tactile sensation, touchable haptic technologies, and bio-realistic artificial intelligence systems. A flexible GaN microwire-based piezotronic sensory memory device is presented to sense and memorize the impressions of tactile information. The device and its array are capable to be programmed into a high resistance state by inputting external strain, and reversibly erased back to the low resistance state with an electrical voltage, showing an advance in bio-realistic artificial intelligence systems. • A flexible GaN microwire-based device is presented to emulate the functions of the biological sensory memory system. • The device can be programmed into HRS by external strain, and reversibly erased back to LRS with electrical voltage. • A distinct spatial mapping of external strain sensing and retaining is demonstrated in the touchable sensory memory array.