Flexible-center Hat Complete Electrode Model for EEG Forward Problem.

Abstract

This study aims to develop a more realistic electrode model by incorporating the non-uniform distribution of electrode contact conductance (ECC) and the shunting effects, to accurately solve EEG forward problem (FP). Firstly, a hat function is introduced to construct a more realistic hat-shaped distribution (HD) for ECC. Secondly, this hat function is modified by applying two parameters - offset ratio and offset direction - to account for the variability in ECC's center and to develop the flexible-center HD (FCHD). Finally, by integrating this FCHD into the complete electrode model (CEM) with the shunting effects, a novel flexible-center hat complete electrode model (FCH-CEM) is proposed and used to solve FP. Simulation experiments using a realistic head model demonstrate the necessity of FCHCEM and its potential to improve the accuracy of the FP solution compared to current models, i.e., the point electrode model (PEM) and CEM. And compared to PEM, it has better performance under coarse mesh conditions (2 mm). Further experiments indicate the significance of considering shunting effects, as ignoring them results in larger errors than coarse mesh when the average contact conductance is large (). The proposed FCH-CEM has better accuracy and performance than PEM and complements CEM in finer meshes, making it necessary for coarse meshes. This study proposes a novel model that enhances electrode modeling and FP accuracy, and provides new ideas and methods for future research.