Abstract
A field-emission light source with high luminance, excellent luminance uniformity, and tunable luminance characteristics with a novel lateral-gate structure is demonstrated. The lateral-gate triode structure comprises SiC nanowire emitters on a Ag cathode electrode and a pair of Ag gate electrodes placed laterally on both sides of the cathode. The simple and cost-effective screen printing technique is employed to pattern the lateral-gates and cathode structure on soda lime glass. The area coverage of the screen-printed cathode and gates on the glass substrate (area: 6 × 8 cm2) is in the range of 2.04% – 4.74% depending on the set of cathode-gate electrodes on the substrate. The lateral-gate structure with its small area coverage exhibits a two-dimensional luminance pattern with high brightness and good luminance uniformity. A maximum luminance of 10952 cd/cm2 and a luminance uniformity of >90% can be achieved with a gate voltage of 500 V and an anode voltage of 4000 V, with an anode current of 1.44 mA and current leakage to the gate from the cathode of about 10%.
Highlights
Lighting accounts for a significant part (20%) of all electrical energy consumed worldwide
Large quantities of Silicon carbide (SiC) nanowires were produced via a modified chemical vapor deposition (CVD) method[24] and their field emission characteristics were studied using a field emission device with a parallel-plate diode structure[8]
CVD was conducted using C2H2 as the carbon source in the presence of the catalyst at 650 °C for 1 hr for the synthesis of Carbon nanotubes (CNTs), which was followed by increasing the temperature to 1300 °C under an argon atmosphere for the synthesis of SiC nanowires
Summary
Meng-Jey Youh[1], Chun-Lung Tseng[2], Meng-Han Jhuang[3], Sheng-Cheng Chiu[4], Li-Hu Huang[3], Jyun-An Gong3 & Yuan-Yao Li3,5,6. A field-emission light source with high luminance, excellent luminance uniformity, and tunable luminance characteristics with a novel lateral-gate structure is demonstrated. The simple and cost-effective screen printing technique is employed to pattern the lateral-gates and cathode structure on soda lime glass. The lateral-gate structure with its small area coverage exhibits a two-dimensional luminance pattern with high brightness and good luminance uniformity. Field-emission light sources, an emissive type of flat panel technology, employs cold field emitters in place of thermal cathodes as electron sources. Emitters in powder form can be used in gram-scale quantities for device fabrication using techniques such as screen-print patterning. The present study investigates the feasibility of field-emission lighting that uses SiC nanowires as emitters. A field emission device with a lateral-gate triode structure was fabricated using a cost-effective screen printing process. Systematic field emission experiments were carried out to find optimal operating conditions for high luminance and good uniformity
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