Abstract
Spin-dependent transport via flat-band states in organic-ferromagnetic devices with spin radicals is investigated theoretically. A spin-resolved negative differential resistance phenomenon is observed together with a spin-filtering effect. A new mechanism as bias-induced distinct localization of the spin-split flat-band states is proposed, which originates from the weaker hybridization of the flat-band states rather than the π-conjugated orbitals. The peak-to-valley ratio increases with the interaction strength between the main chain and radicals. This work explores the unique transport property of flat-band states and their intriguing prospect in designing high-performed organic spintronic devices.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
