Abstract
Cadmium Sulfide (CdS) thin films with thickness (150) nm were deposited by flash evaporation technique (FET) at room temperature. CdS thin films were annealed at temperatures (373 and 473) K. X-ray diffraction (XRD) indicated that the grown CdS films had hexagonal phase with preferential orientation in the (002) direction. Optical absorption measurements indicated direct band gap values in the range 4.1eV and decreased with the increase of annealing temperature. The electrical measurements of the films were studied at annealing temperature (373 and 473) K. The D.C. conductivity for all deposited films within the temperature range (293-493) K were decreased with increasing annealing temperatures. The activation energies (Ea1, Ea2) increased from 0.0598 to 0.155eV and from 0.247 to 0.746eV respectively with the increase of annealing temperature. The films have been n-type conductivity and carrier's concentration decreased with the increase of annealing temperatures.
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