Flange correction to four-terminal contact resistance measurements

U Lieneweg,D.J Hannaman

doi:10.1109/icmts.1990.67875

Flange correction to four-terminal contact resistance measurements

U Lieneweg, D.J Hannaman

https://doi.org/10.1109/icmts.1990.67875

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Publication Date: Jan 1, 1990

Citations: 2

Affiliation: Jet Propulsion Laboratory

#Metal Layer #Four-terminal Measurements + Show 8 more

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Abstract

A heuristic model for flange correction to four-terminal measurements of the interfacial resistance in square contacts between a semiconducting and a metal layer, or between metal layers is presented. The model reproduces results from experiments with geometric variations when a constant interfacial resistivity is fitted, and compares well to simulations.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>

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