Abstract
Recently, a surface energy reduction process (SERP) for stiction-free drying is used for a high aspect pattern structure like shallow trench isolation (STI). The key technology of SERP is trimethylsilyl (TMS) groups termination of the device surface. To explain the electrical influence of TMS groups was found acceptable by measuring the planar capacitor flat-band voltage shift, and the threshold voltage characteristics of 1x-nm node MOS transistors.
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